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IMAGE SENSOR
CCD area image sensor
S8658-01
Front-illuminated FFT-CCD for X-ray imaging
S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS (Fiber Optic plate with Scintillator) to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close proximity to form a long and narrow sensor format. Effective size of each active area is 73.728 (H) x 6.144 (V) mm2, so the overall active area length of the three chips is up to 220 mm in length. Each CCD chip has 1536 x 128 pixels and the pixel size is 48 x 48 m. When used in TDI operation mode which is a special feature of this CCD image sensor, even X-ray images of a moving object can be clearly acquired, making S8658-01 ideal for non-destructive inspection of products carried on a belt conveyor, etc. S8658-01 is pin compatible with S8658: (Operating condition is a little bit changed from S8658)
Features
Applications
l FFT-CCD coupled with FOS for X-ray imaging l 1536 (H) x 128 (V) pixel format l Pixel size: 48 x 48 m l Slit-like image of 220 mm long by aligning 3 CCD chips together l Coupled with FOS for X-ray imaging l TDI (Time Delay Integration) operation l 100 % fill factor l Wide dynamic range l Low dark current l MPP operation
l General X-ray imaging l Non-destructive inspection l Dental panorama, cephalo
s Selection guide
Type No. Cooling S8658-01 Non-cooled Note) As an input window, FOS is suited to S8658-01. Number of total pixels 1536 x 128 Number of active pixels 1536 x 128 Active area [mm (H) x mm(V)] 73.728 x 6.144
s General ratings
Parameter Specification CCD structure Full frame transfer or TDI X-ray sensitive area 220 x 6 mm Fill factor 100 % Number of active pixels 1536 (H) x 128 (V) *1 Pixel size 48 (H) x 48 (V) m CCD active area 73.728 (H) x 6.144 (V) mm * 1 Vertical clock phase 2 phase and 2 line Horizontal clock phase 2 phase and 2 line Output circuit Two-stage MOSFET source follower with load resistance X-ray resolution 4 to 6 Lp/mm at 60 kVp, 10 m Roentgen Reliability 100,000 shots at 60 kVp, 10 m Roentgen Package 60 pin ceramic package W indow FOS (Fiber Optic plate with Scintillator) *1: Number of active pixels per chip. Three chips are used.
PRELIMINARY DATA Apr. 2003
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Storage temperature Operating temperature OD voltage RD voltage ISV voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Tstg Topr VOD VRD VISV VIGV VIGH VSG VOG VRG VTG VP1AV, VP2AV VP1BV, VP2BV VP1AH, VP2AH VP1BH, VP2BH Min. -20 0 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. Max. +70 +40 +20 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15
S8658-01
Unit C C V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate Horizontal input gate Vertical shift register clock voltage High Low High Low High Low High Low High Low Symbol VOD VRD VOG VSSA VSSD VISV VIGV VIGH VP1AVH, VP2AVH VP1BVH, VP2BVH VP1AVL, VP2AVL VP1BVL, VP2BVL VP1AHH, VP2AHH VP1BHH, VP2BHH VP1AHL, VP2AHL VP1BHL, VP2BHL VSGH VSGL VRGH VRGL VTGH VTGL Min. 12 12 -0.5 -5 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 Typ. 15 13 2 0 0 VRD 0 0 3 -8 3 -8 3 -8 3 -8 3 -8 Max. 18 14 5 6 V -7 6 V -7 6 -7 6 -7 6 -7 V V V Unit V V V V V V
Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage
s Electrical characteristics (Ta=25 C)
Symbol fc frg CP1AV, CP2AV Vertical shift register capacitance CP1BV, CP2BV CP1AH, CP2AH Horizontal shift register capacitance CP1BH, CP2BH Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency CTE DC output level Vout Output impedance Zo Power dissipation P *2: Measured at half of the full well capacity. CTE is defined per *3: VOD=15 V. *4: Power dissipation of the on-chip amplifier (each chip). Parameter Signal output frequency Reset clock frequency Remark Min. 0.99995 5 Typ. 2 2 15000 500 15 10 500 0.99999 8 500 60 Max. 4 4 11 Unit MHz MHz pF pF pF pF pF V mW
*2 *3 *3 *3, *4 pixel.
2
CCD area image sensor
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter Symbol Remark Min. Typ. Saturation output voltage Vsat Fw x Sv Vertical 600 1200 Full well capacity Horizontal Fw 600 1200 Summing 600 1200 CCD node sensitivity Sv *5 0.45 0.6 Dark current (MPP mode) DS *6 8 Readout noise Nr *7 60 Dynamic range DR *8 5000 20000 X-ray response non-uniformity XRNU * 9, * 10 10 W hite spots Point defects *11 Black spots Blemish Cluster defects * 12 Column defects * 13 X-ray resolution 4 6 R *5: VOD=15 V. *6: Dark current doubles for every 5 to 7 C. *7: -40 C, operating frequency is 2 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *10: XRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) Measuring region that is within 220.0 mm (H) x 6.0 mm (V) (refer to dimensional outline) *11: W hite spots > 20 times of typ. dark signal (8 ke -/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well *12: continuous 2 to 9 point defects. *13: continuous >10 point defects.
S8658-01
Unit V ke V/e ke -/pixel/s e -rms % Lp/mm
Max. 24 120 30 10 10 0 0 -
capacity.
s Resolution
1.0 0.9 (X-ray source: 60 kVp)
s Response
1000 (X-ray source: 70 kVp)
0.7 0.6
0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10
OUTPUT VOLTAGE (mV)
0.8
CTF
500
0
0
1
2
3
4
SPACIAL FREQUENCY (Line pair/mm)
KMPDB0248EA
X-RAY EXPOSURE (mR)
KMPDB0249EA
3
CCD area image sensor
s Device structure
LEFT CHIP (CHIP A), CENTER CHIP (CHIP B) ISV A14, B14 IGV A15, B15 1 2 3 4 ...... 125 126127 128 2 3 4 5 6 P1BV A16, B16 P2BV A17, B17 P1AV A18, B18 P2AV A19, B19 TG A20, B20 RG A1, B1 RD A2, B2 SSA A3, B3 OS A4, B4 OD A5, B5 OG A6, B6 SG A7, B7 A8, B8 P2AH A9, B9 P1AH A10, B10 SSD A11, B11 A12, B12 A13, B13 P2BH P1BH IGH C1 C2 C3 IGH P1BH P2BH C4 SSD C5 P1AH C6 P2AH 6 5 4 3 2 1 2 3 4 ...... 125 126127 128 RIGHT CHIP (CHIP C)
S8658-01
C20 ISV C19 IGV C18 P1BV C17 P2BV C16 P1AV C15 P2AV C14 TG C13 RG S6 S5 S4 S3 S2 S1 ...... C12 RD C11 SSA C10 OS C9 OD C8 C7 OG SG
1531 1532 1533 1534 1535 1536
S1531 S1532 S1533 S1534 S1535 S1536
S1, ... , S1536: ACTIVE ELEMENTS
S1 S2 S3 S4 S5 S6
......
S1536 S1535 S1534 S1533 S1532 S1531
1536 1535 1534 1533 1532 1531
......
......
S1, ... , S1536: ACTIVE ELEMENTS
KMPDC0143EA
s Pixel format
Blank 0 Optical black 0 Left Horizontal Direction Effective 1536 Right Optical black 0 Isolation 0 Isolation 0
Blank 0
Top Vertical direction Bottom Isolation Effective Isolation 0 128 0
s Timing chart (TDI operation)
Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH
P2AH, P2BH SG RG OS ENLARGED VIEW Tovr TG P1AH, P1BH Tpwh, Tpws
P2AH, P2BH SG RG OS S1 S2 S3 S4 S5 S1535 S1536
KMPDC0142EB
Tpwr
4
CCD area image sensor
s Timing chart (TDI operation, 2 x 2 pixel binning)
Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH
S8658-01
P2AH, P2BH SG RG OS ENLARGED VIEW Tovr TG P1AH, P1BH Tpwh, Tpws
P2AH, P2BH SG RG OS S1 + S2 S3 + S4 S1535 + S1536
KMPDC0111EC
Tpwr
Parameter Symbol Remark Pulse width tpwv *14, *15 Rise and fall time tprv, tpfv Pulse width tpwh P1AH, P1BH, Rise and fall time tprh, tpfh *15 P2AH, P2BH Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1AH, P1BH Overlap time tovr *14: TG terminal can be short-circuited to P2AV terminal. *15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. P1AV, P1BV, P2AV, P2BV, TG
Min. 30 200 125 10 125 10 10 5 10
Typ. 60 250 50 250 50 50 20
Max. -
Unit s ns ns ns % ns ns % ns ns s
5
CCD area image sensor
s Dimensional outline (unit: mm)
X-RAY SENSITIVE AREA: 220.0 (H) x 6.0 (V) FOP 228.0 0.3 223.0 0.5
FOP 7.2 0.2
S8658-01
5.6 FOP 3.0 60.96 1.6 C20 C14 *2
25.4
60.96 A20 A14 *1 LEFT CHIP A1 A13 45.72 B20
15.24 B14
28.0 0.3
CENTER CHIP B1 30.48 B13 45.72
RIGHT CHIP C1 C13 3.4 SCINTILLATOR
0.45
2.54
KMPDA0149EC
*1 Details
50 m MAX.
*2 Details
50 m MAX.
LEFT CHIP EDGE PIXEL DEAD SPACE 1: 250 m MIN. 350 m MAX.
CENTER CHIP
CENTER CHIP EDGE PIXEL DEAD SPACE 2: 130 m MIN. 200 m MAX.
RIGHT CHIP
6
CCD area image sensor
s Pin connections
Pin No. A1, B1 A2, B2 A3, B3 A4, B4 A5, B5 A6, B6 A7, B7 A8, B8 A9, B9 A10, B10 A11, B11 A12, B12 A13, B13 A14, B14 A15, B15 A16, B16 A17, B17 A18, B18 A19, B19 A20, B20 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 Symbol RG RD SSA OS OD OG SG P2AH P1AH SSD P2BH P1BH IGH ISV IGV P1BV P2BV P1AV P2AV TG IGH P1BH P2BH SSD P1AH P2AH SG OG OD OS SSA RD RG TG P2AV P1AV P2BV P1BV IGV ISV Description Reset gate Reset drain Analog ground Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock A-2 CCD horizontal register clock A-1 Digital ground CCD horizontal register clock B-2 CCD horizontal register clock B-1 Test point (Horizontal input gate) Test point (Vertical input source) Test point (Vertical input gate) CCD vertical register clock B-1 CCD vertical register clock B-2 CCD vertical register clock A-1 CCD vertical register clock A-2 Transfer gate Test point (Horizontal input gate) CCD horizontal register clock B-1 CCD horizontal register clock B-2 Digital ground CCD horizontal register clock A-1 CCD horizontal register clock A-2 Summing gate Output gate Output transistor drain Output transistor source Analog ground Reset drain Reset gate Transfer gate CCD vertical register clock A-2 CCD vertical register clock A-1 CCD vertical register clock B-2 CCD vertical register clock B-1 Test point (Vertical input gate) Test Point (Vertical input source)
S8658-01
Remark
Same timing as P2AH Same timing as P1AH Shorted to RD Same timing as P1AV Same timing as P2AV
Same timing as P1AH Same timing as P2AH
Same timing as P2AV Same timing as P1AV Shorted to RD
s Precautions for use (Electrostatic countermeasures)
* Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1078E05
Sep. 2004 DN
7

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